Solution processed metal oxide synaptic transistor with bilayer Li-ion conducting gate dielectric

Rajarshi Chakraborty; Roshan Kumar Singh; Subarna Pramanik; Priyanka Chetri; Akhilesh Kumar Yadav; Pijush Kanti Aich; Pranjit Barman; Bhola Nath Pal

doi:10.1039/d5tc02255j

January 1, 2025Journal of Materials Chemistry C

Solution processed metal oxide synaptic transistor with bilayer Li-ion conducting gate dielectric

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Key Points

Synaptic plasticity achieved through a novel thin film transistor design with a metal oxide dielectric, indicating effective emulation of biological processes.
Key advancement involves a solution processed metal oxide thin film transistor exhibiting synaptic behavior, underlining its potential in neuromorphic applications.
This assessment incorporates a bilayer Li-ion conducting gate in the thin film structure to enhance performance for synaptic functions.
Supports the development of cost-effective neuromorphic devices, highlighting potential for future applications in artificial intelligence systems.

Implication

Analysis demonstrates synaptic plasticity in a thin film transistor using a metal oxide and Li-ion conducting gate dielectric.

Abstract

This study presents a cost-effective, solution-processable approach to emulating synaptic plasticity using a solution processed metal oxide thin film transistor (TFT) with a bilayer Li-ion conducting gate dielectric of Li 5 AlO 4 ...

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Cite This Study

Chakraborty et al. (2025) studied this question.

synapsesocial.com/papers/692b9d831d383f2b2a379642 https://doi.org/10.1039/d5tc02255j

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Solution processed metal oxide synaptic transistor with bilayer Li-ion conducting gate dielectric

Key Points

Implication

Abstract

Discussion

Cite This Study

Solution processed metal oxide synaptic transistor with bilayer Li-ion conducting gate dielectric

Key Points

Implication

Abstract

Discussion

Cite This Study

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