Oxide Interface of Gallium‐Based Liquid Metals: Beneficial Bridge or Hidden Risk?

Oxide interfaces in gallium‐based liquid metals (Ga‐based LMs) are of paramount importance, given their substantial influence on the material properties and performance across a range of applications. The emergence of these interfaces presents a double‐edged sword, providing both significant advantages and potential drawbacks. While a self‐limiting, protective oxide layer improves wettability and functionality, it also restricts fluidity and alters the alloy's fundamental properties. Therefore, understanding the dual role of oxide interfaces—as both a protective barrier and a potential risk—is essential for optimizing its application in fields such as flexible electronics, energy conversion, catalysis, and bioengineering. This article reviews the mechanisms behind oxidation, regulation techniques, and the interactions and reactivity at oxide interfaces. By examining their roles in both enhancing and restricting the performance of Ga‐based LMs, insights into the delicate balance necessary to maximize benefits while mitigating risks in practical applications are offered.