Shear‐Oxidation Regulated Liquid Metals: From High‐Fidelity Patterning to Intelligent Wearable Interfaces

Gallium‐based liquid metals (LMs), due to their extremely high surface tension, are incompatible with conventional manufacturing processes, thereby hindering high‐precision patterning and becoming a serious bottleneck for their application in flexible electronic devices. Here, we present a facile shear‐oxidation modulation strategy and introduce a mass‐evolution‐derived effective oxide‐state descriptor (Φ ox ) for quantitatively evaluating shear‐conditioned liquid‐metal systems. Under ambient shear, the native gallium oxide skin is continuously ruptured and incorporated into the liquid metal matrix, forming an oxide‐enriched metastable microstructure. This structure enhances flow resistance, induces pronounced shear‐thinning behavior, and produces a yield‐like threshold, thereby suppressing surface‐tension‐driven relaxation. Guided by Φ ox ‐based state selection, we demonstrate that a representative low‐Φ ox state enables stable direct writing of low‐interference interconnects, whereas a representative high‐Φ ox state supports blade coating combined with laser patterning for fabricating high‐fidelity features and robust strain‐sensing units. Further integration of these state‐partitioned LM states into interference‐resistant wearable gloves yields reliable multi‐channel motion signals, enabling 100% gesture‐recognition accuracy with a lightweight Transformer model and supporting real‐time robotic‐hand control. These findings highlight oxide‐state engineering as a route to balance fluidity, pattern stability, and electrical functionality in Ga‐based LMs, providing a foundation for scalable flexible electronics and human‐machine interfaces.