Research highlights enhancements in photodetectors using TeSe-alloys, indicating improved performance through interface engineering and advanced fabrication methods.
Tellurium–selenium alloy films exhibit excellent performance in short-wave infrared photodetection due to their adjustable bandgap, high carrier mobility, low fabrication temperature, and compatibility with CMOS technologies. Owing to their distinctive one-dimensional chain-like architecture, they can form van der Waals heterojunctions with materials such as silicon, III–V compound semiconductors, and metal oxides. This enables the construction of high-performance short-wave infrared photodetectors. This research examines the latest advancements in heterojunction photodetectors utilizing TexSe1−x alloy sheets. First, the backdrop and justification of this review are outlined followed by discussing the fundamental aspects of TexSe1−x alloy films including their appearance, electrical functionality, optoelectronic performance, fabrication methods and figures of merit for photodetectors. Subsequently, we examine recent advancements in heterojunction photodetectors based on TexSe1−x alloy films and discuss methods to enhance device performance through interface engineering and structural design. Finally, we consolidate the findings and discuss potential future developments and challenges we may encounter.
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Xu et al. (2025) studied this question.
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