Comparative transport analysis reveals persistent photoconductivity in p-type Sb2Se3, suggesting effects on electron and hole mobility.
We report persistent photoconductivity in p-type Sb2Se3 single crystals doped with Cd or Zn, where enhanced conductivity remains for hours after illumination ceases at temperatures below ∼25 K. Comparative transport and infrared absorption measurements, including on n-type Cl-doped counterparts, reveal strong indications that hole transport in Sb2Se3 is more strongly affected by intrinsic carrier scattering than electron transport. These results point to a fundamental asymmetry in charge carrier dynamics and highlight the potential role of polaronic effects in limiting hole mobility in this quasi-one-dimensional semiconductor.
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Hobson et al. (2025) studied this question.
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