Photoplasticity Behavior in Inorganic Semiconductors: Unraveling Fundamental Mechanisms across Ionic and Covalent Systems

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The aim is to understand the photoplasticity behavior in inorganic semiconductors based on their bonding character.
Examined different inorganic semiconductor materials including ionic and covalent systems.
Analyzed the effects of light exposure on dislocation-mediated plastic flow.
Investigated carrier-defect interactions in various semiconductor configurations.
Photoplasticity behavior varies significantly based on the type of bonding in the semiconductor.
Ionic II–VI compounds showed distinct responses compared to covalent systems under light exposure.
Carrier-defect interactions played a crucial role in the plastic flow changes observed.

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Observational study uncovers photoplasticity mechanisms in inorganic semiconductors, suggesting material dependency.

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Cao et al. (2026) studied this question.

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