Analysis of high frequency characteristics dependence of 90nm SOI CMOS technology based circuits on design parameters of transistor interconnects

Based on electromagnetic modeling, various interconnection layouts for transistors implemented in the lower metallization and polysilicon layers of SOI 90 nm technology were investigated. The purpose of this work was to optimize transistor interconnect designs to minimize losses and then include the obtained data in parameterized cells of the design kit. As a result, characteristic features of transmission coefficient attenuation in structures designed for amplification and switching transistors with various interconnections were identified.