Development and analysis of a CMOS SPDT switch shows improved performance in circuitry applications, indicating efficient design strategies.
The article is devoted to the development and analysis of the characteristics of an X-band single-pole double-throw (SPDT) switch, which is designed using complementary metal-oxide-semiconductor (CMOS) 90-nm technology.To improve the characteristics of the switch a circuit containing a transistor with the floating body. Theoretical justifications are given, and an assessment of the effectiveness of using this technical solution for the development of key circuits based on CMOS technologies is given.The developed SPDT circuit demonstrates a decrease in the level of losses introduced during switching while maintaining a high level of isolation and a significant increase of the output power level.
No takes yet. Share an insight, caveat, or question.
Vladimir Losev (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: