What question did this study set out to answer?

To design and fabricate an ultra-wideband millimeter-wave SPDT switch operating from 50 to 94 GHz using standard bulk 90-nm CMOS technology.

February 1, 2007IEEE Microwave and Wireless Components Letters

A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

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Authors

SCShih‐Fong ChaoNational Kaohsiung Marine University HWHuei WangAmgen (United States)CSChia-Yi SuTaiwan Semiconductor Manufacturing Company (Taiwan)

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Implication

Experimental study demonstrates a 50-to-94-GHz CMOS switch with low insertion loss, suggesting standard silicon can rival compound semiconductors in high-frequency applications.

Key Points

To design and fabricate an ultra-wideband millimeter-wave SPDT switch operating from 50 to 94 GHz using standard bulk 90-nm CMOS technology.
Fabricated a fully integrated single-pole-double-throw transmit/receive switch in standard bulk 90-nm CMOS with a total die area of 0.57 × 0.42 mm².
Implemented a traveling-wave circuit architecture to minimize high-frequency signal attenuation and extend functional bandwidth.
Achieved an operational bandwidth of 50 to 94 GHz, with a measured insertion loss of 2.7 dB at the 77-GHz center frequency.
Demonstrated an input 1-dB compression point of 15 dBm alongside 29 dB of isolation at 77 GHz.

Cite This Study

Chao et al. (2007) studied this question.

synapsesocial.com/papers/6a9bf1058fb05164be850bf6 https://doi.org/10.1109/lmwc.2006.890339

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Implication

Experimental study demonstrates a 50-to-94-GHz CMOS switch with low insertion loss, suggesting standard silicon can rival compound semiconductors in high-frequency applications.

A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

Discussion

Member takes

Implication

Key Points

Cite This Study

A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

Discussion

Member takes

Implication

Key Points

Cite This Study

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