Method of reducing LER-effect when creating elements of integrated photonics

The paper analyses and presents the main factors contributing to the LER effect, the features of mask distortion transfer to the created structures, as well as methods of investigating the roughness of mask line edges and surface morphology of the formed nanoscale structures. The influence of the lithographic process and the technology of transferring patterns of photonic integrated circuits elements on the surface quality of the created structures is analysed. The causes of morphology change and key factors influencing the LER-effect are investigated, and possible solutions are proposed. Methods are described and experimental technology is proposed to reduce the roughness of the photoresist mask affecting the characteristics of ICs and photonic integrated circuits, including the optimisation of the photolithography process, the use of special materials and technologies of their application to create layers of anti-reflection coatings and rigid masks, as well as the use of additional technologies and methods of surface treatment of the formed layers.