With the advent of electric vehicles, the demand for non-destructive inspection methods for battery evaluation has increased. Among various requirements, achieving high-frame-rate performance is particularly critical for rapid inspection in end-user systems. However, image delay, which increases with frame rate, has emerged as a significant challenge due to inherent limitations in sensor design. As a result, extensive research has been conducted to improve image lag performance. In this study, we conducted an in-depth analysis of the fundamental causes of image lag in image sensors. Based on these findings, we fabricated a novel sensor with a reset transistor separate from the readout transistor used for data transfer. This approach effectively increased the reset current of the photodiode, significantly reducing image lag. The transistor material used in this study was InGaZnO, which showed a significant improvement in image lag compared to conventional methods. By introducing a dedicated reset transistor, the allowable reset current of the PIN diode was increased by a factor of 100 compared to the ROIC-limited condition, resulting in a significant reduction in image lag from 3.8% (STS) to 0.9% (DTS) under high-frame-rate operation. This research provides a theoretical basis for proposing various new X-ray digital image sensor structures.
Jang et al. (2026) studied this question.