Nonvolatile Electrical Modulation of Magnetization Switching Process in Patterned SrRuO ₃ Thin Films

Magnetization switching plays a key role for high‐density, ultrafast, non‐volatile spin‐based devices. Although domain modulation via interfacial or thickness effects has been studied, the impact of fabrication structures on switching remains underexplored. Here, we investigate geometric and boundary effects on magnetotransport in patterned SrRuO 3 (SRO) films made via advanced micro/nanoscale processing. Channel miniaturization to one micrometer hugely increases saturation field from 9 to 32.5 kOe. Edge magnetic anisotropy induces pronounced multi‐step magnetization switching, validated by micromagnetic simulations. Non‐volatile electrical modulation of magnetization is achieved in multiferroic films: 10 nm SRO exhibits a voltage‐tunable high‐field magnetoresistance (MR); 7.8 nm SRO shows a suppressed multi‐step switching alongside a high‐field modulation of MR; particularly, 2.6 nm SRO has a coercive field altered from 21.6 to 12.1 kOe by ±9 V. These results stem from ferroelectric polarization and antiferromagnetism. This switching process, regulated by geometry and external bias, enables advances in multistate memory and artificial synapses.