This review focuses on gallium nitride (GaN) semiconductor materials, systematically discussing the latest research progress in doping modulation, interface engineering, and their applications in power devices. First, the article analyzes the mechanisms through which donor-type (e.g., Si) and acceptor-type (e.g., Mg) doping influence the electrical properties and piezoelectric characteristics of GaN, summarizing the regulatory effects of doping strategies on carrier concentration, mobility, and material stability. Second, it highlights the interfacial behavior and the formation principles of two-dimensional electron gas in AlGaN/GaN heterostructures, reviewing the contributions of interface passivation, interlayer optimization, and stress management to enhancing device dynamic characteristics and reliability. Finally, the review provides an in-depth analysis of the current applications of GaN-based high-electron-mobility transistors and power diodes in fields such as high-efficiency power conversion and high-frequency power switching, while also envisioning their future prospects in next-generation energy Internet and electric driving. This paper aims to offer a systematic reference for the material design and performance optimization of GaN-based power devices.
Ren et al. (Wed,) studied this question.