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February 19, 2026Applied Physics Letters

High-mobility nitrogen-polar GaN/AlGaN heterostructures via impurity modulation

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Authors

HMHaotian MaJilin UniversityGDGaoqiang DengJilin UniversitySYShixu YangJilin University

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Implication

This work demonstrates improved two-dimensional electron gas mobility in N-polar GaN/AlGaN heterostructures, indicating enhanced performance for high-frequency applications.

Key Points

  • To enhance mobility in nitrogen-polar GaN/AlGaN heterostructures using impurity modulation techniques.
  • Grew N-polar GaN/AlGaN heterostructures on SiC substrates using MOCVD
  • Lowered growth temperature of high-resistance GaN template layer
  • Measured two-dimensional electron gas mobility and sheet resistance
  • Achieved a two-dimensional electron gas mobility of 1947 cm2/V s, the highest reported value
  • Mobility enhancement linked to reduced oxygen impurity concentration
  • Lower growth temperature increased sheet resistance, suppressing leakage current and enhancing mobility

Cite This Study

Ma et al. (2026) studied this question.

synapsesocial.com/papers/6996a8b5ecb39a600b3efbe7https://doi.org/10.1063/5.0313847
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