Findings demonstrate high-performance organotin carboxylate resists in DUV lithography, highlighting potential applications in advanced semiconductor manufacturing.
With outstanding lithographic performance, metal-organic hybrid resists are gradually gaining acceptance in the semiconductor industry. While extensively investigated for extreme ultraviolet (EUV) patterning, the specific performance and mechanisms of metal-organic hybrid resists in deep ultraviolet (DUV) lithography have been less studied. Herein, we present a series of organotin carboxylates (OTCs) bearing varied carboxylate ligands as nonchemically amplified DUV resists. Through molecular optimization, this material family demonstrates sub-100 nm resolution with high pattern quality and etch resistance, potentially serving as a direct-patternable hard mask in a bilayer configuration. The structural conversion of the OTCs under DUV irradiation was investigated, revealing a radical-mediated photochemical process. Our findings highlight the viability of OTC material family as high-performance DUV resists in advanced nodes.
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Liu et al. (2026) studied this question.
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