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The aim is to explore how phonon scattering and material composition affect thermal reliability in GaN HEMT devices.

Investigation of Thermal Characteristics of Multilayer Heterostructures for Enhanced GaN HEMT Reliability

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The aim is to explore how phonon scattering and material composition affect thermal reliability in GaN HEMT devices.
Modified ballistic diffusive equation utilized for heat transfer analysis.
Finite element simulations conducted to assess thermal behavior.
Comparative analysis of AlGaN layers with varying aluminum content.
Umklapp scattering significantly reduces thermal conductivity with increasing temperature and decreasing layer thickness.
Higher aluminum content in layers leads to increased boundary scattering and distinct thermal conductivity trends.
Peak temperature observed in GaN channel, rapidly declining across AlGaN barriers.

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Investigation reveals how thermal conductivity impacts GaN HEMT reliability through phonon effects.

Mzoughi et al. (2026) studied this question.

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