Numerical analysis reveals effects of 2D processes on electron bunching efficiency in high-power devices, suggesting optimization paths.
The authors discuss results from studying the effect 2D processes have on the bunching of electrons in high-power single-beam relativistic klystrons. Data are presented on the maximum achievable efficiency of such devices. Results are presented from a numerical analysis of the structure and magnitude of wake fields of relativistic electron bunches as a function of the degree of compression of bunches and the energy of electrons.
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Rodyakin et al. (2026) studied this question.
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