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This research aims to explore the integration of lithium tantalate on silicon nitride for high-speed communications.

March 2, 2026Nature CommunicationsOpen Access

Heterogeneously integrated lithium tantalate-on-silicon nitride modulators for high-speed communications

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Ultrabroadband integrated modulators improve modulation bandwidth in communications, suggesting a new platform for RF photonics.

This research aims to explore the integration of lithium tantalate on silicon nitride for high-speed communications.
Wafer-scale integration of lithium tantalate films on silicon nitride photonic circuits.
Assessment of optical losses and modulation bandwidths in fabricated devices.
Transmitting PAM4 and 16-QAM signals using single intensity and IQ modulators.
Achieved low optical losses of approximately 14.2 dB/m.
Devices support modulation bandwidths of up to 100 GHz.
PAM4 and 16-QAM signals transmitted at net data rates of up to 333 and 581 Gbit/s, respectively.

Cai et al. (2026) studied this question.

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