This paper reviews in depth a procedure to compare the performance of CNTFET and MOSFET devices through the design of a SRAM cell. The results indicate that both technologies enable the realization of low-power devices, with CNTFET technology exhibiting higher speed. Comparative simulations highlight significant improvements in switching delay and energy efficiency when operating in the sub-threshold region using CNTFETs. The findings confirm CNTFET suitability for ultra-low-power and high-frequency applications, positioning it as a strong alternative to traditional CMOS in next-generation memory architectures.
Roberto et al. (Wed,) studied this question.