Ruthenium( ii ) carbonyl amidates – a new class of precursors for atomic layer deposition

Key Points

New Ru dicarbonyl bisamidate complexes show improved precursors for thin films in atomic layer deposition, offering enhanced performance.
The volatile liquid precursor exhibits excellent thermal properties, critical for efficient film growth during the ALD process.
First principles simulations predict it interacts favorably with common co-reactants in ALD, suggesting enhanced reactivity.
These findings highlight a promising direction in designing new precursors with optimal properties for electronic and catalytic applications.

Abstract

Ru-based thin films are essential for electronics and catalysis. Their growth through atomic layer deposition (ALD) depends on precursors that balance reactivity, volatility, and thermal stability. We present the first Ru dicarbonyl bisamidate complexes as a new and promising class of ALD precursors for Ru-based materials. Modifying the substitution pattern of the amidate ligands yielded Ru(CO)2(N-sBuiPrAD)2, as a volatile liquid precursor with excellent thermal properties. First principles simulations predict favorable interactions with common ALD co-reactants, indicating its potential for thin film deposition.

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