This work investigates negative differential resistance and avalanche effects in Nb-doped MoS2 homojunctions, suggesting new insights for 2D device applications.
This work reports the fabrication and characterization of a thickness-modulated lateral p–n homojunction from a single flake of Nb-doped MoS2. The devices exhibit strong rectification, a low ideality factor (~1.23), and field-dependent negative differential resistance (NDR) at low temperatures. The homojunction photodetectors demonstrate high photoresponsivity, external quantum efficiency, and detectivity. Electrical breakdown studies further reveal avalanche multiplication at relatively low voltages. The results establish a robust platform for probing carrier multiplication and tunneling phenomena in 2D TMDC homojunction devices.
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Elahi et al. (2026) studied this question.
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