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Investigate the structural uniformity and electrical transport mechanisms of 2D/3D MoS2/4H-SiC heterojunction diodes fabricated across varying substrate doping concentrations.

October 4, 2022Advanced Materials InterfacesOpen Access

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

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Investigate the structural uniformity and electrical transport mechanisms of 2D/3D MoS2/4H-SiC heterojunction diodes fabricated across varying substrate doping concentrations.
Deposited uniform three-layer MoS2 films using pulsed laser deposition onto 4H-SiC(0001) with n− epitaxial doping (≈10^16 cm−3) and n+ ion implantation doping (>10^19 cm−3).
Characterized structural uniformity and electrical properties via Raman mapping, transmission electron microscopy, temperature-dependent current–voltage measurements, and conductive atomic force microscopy.
MoS2/n− SiC diodes displayed highly rectifying behavior dominated by thermionic emission, with an effective barrier height of ΦB = (1.04 ± 0.09) eV.
MoS2/n+ SiC diodes exhibited significantly increased current injection ruled by thermionic-field-emission through the narrow depletion region, displaying a lower barrier height of ΦB = (0.31 ± 0.01) eV and a temperature-dependent ideality factor.

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Implication

Experimental investigation demonstrates tunable electronic transport in 2D/3D MoS2/4H-SiC heterojunction diodes, highlighting a scalable pathway for industrial semiconductor device integration.

Cite This Study

Giannazzo et al. (2022) studied this question.

synapsesocial.com/papers/6a9870a756090231529fb2e4 https://doi.org/10.1002/admi.202201502

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Implication

Experimental investigation demonstrates tunable electronic transport in 2D/3D MoS2/4H-SiC heterojunction diodes, highlighting a scalable pathway for industrial semiconductor device integration.

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

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Discussion

Implication

Cite This Study

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Key Points

Discussion

Implication

Cite This Study

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