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This research aims to create a multilevel cell PUF using threshold voltage and drain-induced barrier lowering in silicon MOSFETs to enhance security.

Dual-Parameter Variable Physically Unclonable Function (PUF) for Multilevel Cell Silicon MOSFETs

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This research aims to create a multilevel cell PUF using threshold voltage and drain-induced barrier lowering in silicon MOSFETs to enhance security.
Developed a dual-parameter PUF based on silicon MOSFETs utilizing threshold voltage and drain-induced barrier lowering.
Fabricated single-crystalline and polycrystalline silicon MOSFET devices for analysis.
Evaluated statistical dependence using conditional probabilities, entropy, mutual information, and Pearson correlation coefficient.
Measured security via uniformity, interchip Hamming distance, and intrachip Hamming distance.
Demonstrated robust statistical links between threshold voltage and drain-induced barrier lowering.
Achieved high uniformity and appropriate Hamming distances, indicating strong security features.
Showed compatibility with monolithic integration for compact chip designs.

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Evaluation of a dual-parameter PUF using silicon MOSFETs indicates enhanced security and integration capabilities.

KANG et al. (2026) studied this question.

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