What question did this study set out to answer?

This research aims to examine how non-ideal wordline etch slopes affect read/write performance in BCAT-based DRAMs.

March 13, 2026Electronics0 citationsOpen Access

Impact of Non-Ideal Wordline Etch Slopes on Read/Write Degradation in BCAT-Based DRAM

YCYeongmyeong ChoGangneung–Wonju National University GKGyu-Beom KimGangneung–Wonju National University MBMyung-Hyun BaekGangneung–Wonju National University

Key Points

This research aims to examine how non-ideal wordline etch slopes affect read/write performance in BCAT-based DRAMs.
Utilized Technology Computer-Aided Design (TCAD) for modeling
Simulated a two-dimensional BCAT-based DRAM cell
Analyzed variations in device characteristics and operations
Inserted a buried oxide layer to improve performance
Increased etch slope angles led to performance degradation
Failed to meet read pass/fail criteria
Decreased data retention during the 300 ms hold interval
Incorporating a buried oxide layer improved device robustness

Abstract

This study investigates the impact of non-ideal wordline sidewall angles caused by photoresist profile variation during the wordline etching process in DRAMs employing a buried-channel array transistor (BCAT) structure. Using Technology Computer-Aided Design (TCAD), a two-dimensional (2D) BCAT-based DRAM cell was modeled to analyze the resulting variations in device characteristics as well as write and hold operations. The simulation results show that increased etch slope angles lead to degradation in device performance, including failure to meet the read pass/fail criterion and data retention during the 300 ms hold interval. To mitigate these issues, we inserted a buried oxide (BOX) layer beneath the active wordline (AWL). The incorporation of the BOX layer effectively improved overall device robustness and reduced the degradation induced by non-ideal etch slopes.

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