High‐Efficiency Phosphor Thin Films With Controlled Lateral Displacement for Low Color Crosstalk in Micro‐LED Displays

In this study, an optimized nano‐phosphor thin film was developed for micro‐LED applications, demonstrating high efficiency in color conversion and effective suppression of lateral photon displacement. The film achieved a quantum efficiency of 86%, consistent with theoretical predictions. The measured lateral displacement of 8.44 μm closely matched the simulated value of 7.94 μm, validating the accuracy of the photon transport model. Under ~445‐nm excitation, the film exhibited a broad Stokes‐shifted emission band spanning 480–780 nm with a maximum near 560 nm, and the calculated CIE color coordinates ( x = 0.2893, y = 0.3377) were close to the D65 white point, ensuring stable color quality. The film also maintained nearly 100% of its fluorescence intensity up to 120°C and showed only minimal degradation at 150°C, with partial recovery after thermal stress at 200°C. In contrast, quantum dot converters exhibited rapid thermal quenching above 80°C–100°C with no recovery, underscoring the superior thermal robustness of the nano‐phosphor thin film. These results highlight a practical and scalable approach for realizing high‐performance phosphor thin films in full‐color Micro‐LED display technologies.