This analysis compares collector and base currents in bipolar junction transistors with different base profiles, indicating performance variations.
The analytical equations of collector and base currents and emitter-base and collector-base diffusion capacitances of the bipolar junction transistor in saturation have been reviewed and updated. Comparisons of three base profiles (uniform, exponential, and Gaussian) in terms of electron current density, transconductance, diffusion capacitance, and base transit time are presented.
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A 1995 study studied this question.
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