Collector Base Junction Capacitance Of Advanced Bipolar-Transistors Operating At Avalanche Breakdown

Modeling of the collector-base junction capacitance of the advanced bipolar transistors operating at avalanche breakdown is developed. The comprehensive junction capacitance model accounts for high current and high field effects at the collector-base junction. The impact ionization generates tremendous amount of free carriers in the collector-base space-charge region which increases the collector-base junction capacitance at the avalanche breakdown regime. The present collector-base junction capacitance is useful for device and circuit design under avalanche breakdown prior to the actual fabrication of the circuit.