What question did this study set out to answer?

This research focuses on evaluating the effects of temperature on the performance of GaN-based GAA FETs.

March 23, 2026Materials Today Electronics1 citationsOpen Access

Temperature Sensitivity Effects and RF Analysis of High-K Wrapped Spacer Induced GaN based Gate-All-Around FETs

SSSneha SinghMizoram University ASAbhishek SahaMizoram University RDRudra Sankar DharMizoram University

Puntos clave

This research focuses on evaluating the effects of temperature on the performance of GaN-based GAA FETs.
Analyzed temperature sensitivity of GAA FETs from 300K to 500K
Measured device metrics: subthreshold swing, switching speed, transconductance, and DIBL
Utilized GaN material for its thermal properties
Compared nanowire and nanosheet GAA FETs for performance improvements
Nanowire GAA FETs show superior electrostatic control with SS of 60.54mV/dec at 300K
Cut-off frequency reaches 17.41THz for nanowire GAA FETs, outperforming nanosheet devices
Thermal resilience noted with SS increasing at higher temperatures
2nm gate underlap with high-k spacer minimizes DIBL and leakage currents

Resumen

The performance of gate-all-around field effect transistors (GAA FETs) are increasingly critical in 1.5 nm technology nodes, particularly for high-frequency wireless systems that operates across variable thermal environments. The impact of varying operating temperatures considering devices subjected to radiation effect are analysed for newly developed nanosheet and nanowire channel GAAs. GaN is utilized as the channel material due to its superior thermal conductivity and high breakdown field ensuring stable operation even under elevated temperatures. Device performance metrics including subthreshold swing (SS), switching speed, transconductance, and DIBL are extracted across a temperature range of 300K to 500K. Nanowire cylindrical GAA FETs exhibit superior electrostatic control with a reduction in SS to 60.54mV/dec at 300K and off-state current to 5.31 × 10 -16 A/µm. With increasing temperature (500K), the SS rises to 63.54 mV/dec in nanosheet devices, while in nanowire GAA FET SS is 62.05mV/dec, indicating stronger thermal resilience for GaN based material. The 2nm gate underlap wrapped with high-k spacer effectively suppresses DIBL and reduces various leakages. Cut-off frequency (f T ) analysis reveals that Nanowire GAA FETs achieve a peak value of 17.41THz, outperforming the Nanosheet GAA which reaches 15.15THz under identical biasing conditions at 300K. The enhanced performance of nanowire devices is attributed to their stronger electrostatic control, no corner effects, larger conduction area, and improved field distribution, enabling superior high frequency characteristics and robust thermal behavior. These results demonstrate the potentiality of optimized GaN nanowire GAA FETs for next-generation RF front-end modules and advanced logic circuits even under elevated thermal stress. High performance GaN NW CGAA FET with 2nm underlap and wrapping high-K spacer: Proposed structure enables superior electrostatic control, reduced leakage and enhanced performance for advanced nanoelectronics.

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