Cycle-accurate evaluation reveals significant performance gains in NCC-Sign on ARM hardware, indicating improved efficiency.
This paper presents an ARMv8/NEON-oriented implementation of NCC-Sign targeting the NTT-friendly trinomial parameter sets (NCC-Sign-1/3/5), whose dominant cost arises from mixed-radix NTT computations with n=2a·3b. We design lane-local SIMD kernels—including a four-lane Montgomery multiply–reduce, a centered modular reduction pass, a fused stage-0 butterfly, and streamlined radix-2/radix-3 pipelines—and extend them with three further optimizations: (i) radix-2 multi-stage butterfly merging to halve intermediate load/store traffic, (ii) a stride-3 vectorization technique exploiting NEON structure load/store instructions (vld3q/vst3q) to fully vectorize small-len radix-3 stages that would otherwise fall back to scalar execution, and (iii) NEON-parallel pointwise Montgomery multiplication. Using cycle-accurate PMU measurements under identical toolchains for baseline and optimized builds on Apple M1 Pro, we observe geometric-mean speedups of 1.40× for key generation, 2.24× for signing, and 2.01× for verification across NCC-Sign-1/3/5, with per-kernel gains of up to 5–6× for NTT/INTT and 7.5× for pointwise multiplication. To contextualize these results, we provide a direct comparison with the NEON-optimized ML-DSA (Dilithium) implementation of Becker et al. on the same platform, a cross-platform evaluation on Arm Cortex-A72 (Raspberry Pi 4), a Montgomery-versus-Barrett microbenchmark supporting our design choice, and an empirical constant-time assessment via dudect confirming that no timing leakage is detected in any NEON kernel under 30 million measurements.
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Lee et al. (2026) studied this question.
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