Evaluation by thermal desorption method of Cs - Sb compound photocathode deposited on GaAs substrate

We have investigated surface adsorption states of Cs-Sb compounds by depositing Cs and Sb atoms on GaAs substrate for novel semiconductor photocathodes with high quantum efficiency and long lifetime. From the thermal desorption method, an Sb desorption peak was observed only in the region at around 500℃, while there were nine desorption peaks of Cs. From the correlation between each quantum efficiency and the estimated activation energy values, it is considered that a various Cs-related structures were formed on the GaAs surface.