Evaluation of Ce-Si compound oxide films by hydrolytic MOCVD

The compound oxide of Ce and Si was deposited on p-type Si (100) substrates by pyrolytic MOCVD with the continuous introduction of Ce(OCEt_2Me)_4 and H_2O along with the intermittent introduction of TEOS (tetra ethoxy ortho silicate). From the X-ray photoelectron spectroscopy (XPS) measurement, the concentration of Si in the films with the introduction of H_2O of 1, 2, or 4 sccm were found to be 12.3%, 14.8% and 16.4%, respectively. In X-ray diffraction (XRD) measurements, the CeO_2 peaks distinctly found from the pure CeO_2 films were suppressed to the trace level in Ce-Si oxide films with the increase of Si concentration. In the low electric field, the leakage current density of pure CeO_2 films was the lowest. On the other hand, the leakage current density of the films with the highest Si concentration was the lowest at the high electric field. The effective dielectric constant was reduced from 19.9 to 11.7 by the increase of Si concentration.