Investigates electrical properties of n-type diamond semiconductors, revealing implications for ion implantation techniques.
We have investigated the electrical properties of P^+-implanted type IIa diamond substrates to form n-type diamond semiconductors. In this study, P^+ ions were implanted at substrate temperatures of 900℃ and room temperature (RT), followed by 1150℃ annealing to activate the implanted P atoms. The electrical properties were measured using van der Pauw method for sheet resistance and Hall effect measurements. The activation energy evaluated from the dependence of sheet resistance on the inverse absolute-temperature was estimated to be 0.6 eV at the measured temperatures from 573 K to 873 K for the P^+-implanted sample at 900℃. The sheet resistance of the RT-implanted samples was lower than that of the 900℃-implanted ones at all measured temperatures. However, n-type conduction was not clearly observed in the Hall effect measurements for all the samples. It is consequently shown that the 1150℃ annealing is not enough to effectively substitute the implanted P atoms for C lattice atoms in the diamond substrate.
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Inagaki et al. (2020) studied this question.
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