A Novel Local Ferroelectric Structure for Optimizing On‐State Current and Subthreshold Swing Characteristic in Inverted T‐Channel TFETs

In this work, a novel double‐gate local ferroelectric extended source inverted T‐shaped channel tunneling field‐effect transistor (DG‐LFE‐IT‐TFET) is proposed. The DC and analog/RF performance of the DG‐LFE‐IT‐TFET is systematically analyzed through the TCAD simulation platform. The simulation results indicate that the DG‐LFE‐IT‐TFET exhibits a lower off‐state current (I off = 7.24 × 10 −17 A/µm), a suppressed ambipolar current (I amb = 6.91 × 10 −16 A/µm), and a higher on‐state current (I on = 1.10 × 10 −4 A/µm). Moreover, the subthreshold swing (SS) of the DG‐LFE‐IT‐TFET can be as low as 7.6 mV/dec, and the I on /I off ratio can reach 1 × 10 12 . Finally, the DG‐LFE‐IT‐TFET demonstrates significantly improved output conductance (g ds = 593 µS/µm), transconductance (g m = 266 µS/µm), cutoff frequency (f T = 20.7 GHz), and gain bandwidth (GBW = 8.8 GHz) in terms of analog/RF performance. This study provides a reference for the design and enhancement of the characteristics of the TFET devices applied in low‐power integrated circuits.