High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding

We demonstrate germanium photodetectors integrated on submicron silicon waveguides fabricated with a low temperature ( <or=400 degrees C) wafer bonding and ion-cut process. The devices shows a low dark current of approximately 100 nA, a fiber accessed responsivity of > 0.4 A/W and an estimated quantum efficiency of above 90%.