What question did this study set out to answer?

To evaluate the performance and CMOS-compatibility of selective epitaxial germanium photodetectors on silicon-on-insulator fabricated using an ultrathin low-temperature Si0.8Ge0.2 buffer without cyclic annealing.

August 13, 2007Applied Physics Letters

Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer

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Authors

TLTer-Hoe LohTokyo Institute of Technology HNHai Son NguyenUniversité Claude Bernard Lyon 1 RMR.V.R. MurthyPerkinElmer Biosignal

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Implication

Experimental study demonstrates high-speed germanium photodetectors on silicon-on-insulator without high-temperature annealing, suggesting straightforward integration into standard CMOS processes.

Key Points

To evaluate the performance and CMOS-compatibility of selective epitaxial germanium photodetectors on silicon-on-insulator fabricated using an ultrathin low-temperature Si0.8Ge0.2 buffer without cyclic annealing.
Fabricated p-i-n mesa-type normal incidence photodiodes with 400 nm selective epitaxial germanium on silicon-on-insulator substrates.
Employed an ultrathin (~14 nm) low-temperature Si0.8Ge0.2 buffer layer without cyclic high-temperature annealing.
Characterized bulk dark current density, surface leakage, external quantum efficiency across multiple optical wavelengths, and 3-dB bandwidth.
Obtained bulk dark current densities of 1.5–2 mA/cm² and peripheral surface leakage current densities of 14–19.5 μA/cm at −1 V.
Achieved peak external quantum efficiencies of 27% at 850 nm, 9% at 1.3 μm, and 2.9% at 1.56 μm under −5 V in a 28 μm diameter photodiode.
Demonstrated a 3-dB bandwidth of ≥15 GHz at −1 V in a 15×15 μm² square photodiode.

Cite This Study

Loh et al. (2007) studied this question.

synapsesocial.com/papers/6a735dce4e58671dcf6c305e https://doi.org/10.1063/1.2769750

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Implication

Experimental study demonstrates high-speed germanium photodetectors on silicon-on-insulator without high-temperature annealing, suggesting straightforward integration into standard CMOS processes.

Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer

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Key Points

Cite This Study

Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer

Discussion

Member takes

Implication

Key Points

Cite This Study

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