A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position E f from a consistent solution of Schrodinger's and Poisson's equations in the quantum well, considering the two important energy levels. The accuracy of our E f calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from E f is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.
No takes yet. Share an insight, caveat, or question.
Khandelwal et al. (2012) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: