Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 23, 2015Advanced Functional Materials

Self‐Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance

View Full Paper
Ask AI
Bookmark
Share

Authors

KKKyung Min KimKorea Advanced Institute of Science and TechnologySLSeung Ryul LeeSeoul National University of Science and TechnologySKSungho KimUniversity of Rhode Island

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Kim et al. (2015) studied this question.

synapsesocial.com/papers/69d8356c3eff0c9dfaae399fhttps://doi.org/10.1002/adfm.201403621
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance2008 · 272 citations
  2. 2Nonvolatile Memory with Multilevel Switching: A Basic Model2004 · 580 citations
  3. 3Memristor-The missing circuit element1971 · 10,273 citations
  4. 4Nanoscale Memristor Device as Synapse in Neuromorphic Systems2010 · 4,199 citations
  5. 5A memristor-based nonvolatile latch circuit2010 · 90 citations