What question did this study set out to answer?

The research aims to develop a method for stable multistate magnetic switching at the nanoscale.

Sub-100-nm multistate spin–orbit torque magnetic tunnel junction enabled by local perpendicular anisotropy gradient

View Full Paper

Ask AI

Bookmark

Authors

This work demonstrates multistate magnetization switching in nanoscale devices, indicating a new approach for high-density memory applications.

The research aims to develop a method for stable multistate magnetic switching at the nanoscale.
Introduce a nanoscale gradient of perpendicular magnetic anisotropy via ion implantation
Implement SOT-driven magnetization switching in 70-nm-scale devices
Analyze the effect of current amplitude on magnetization states
Achieved intermediate magnetization states with increasing current amplitude
Demonstrated field-free multistate magnetization switching
Provided a fabrication-compatible strategy for nanoscale SOT devices

Yu et al. (2026) studied this question.

View Full Paper

Ask AI

Bookmark

This work demonstrates multistate magnetization switching in nanoscale devices, indicating a new approach for high-density memory applications.