The novel design and fabrication of monolithically integrated passive waveguide mode converters (WMCs), realized through the utilization of the reactive ion-etch lag (RIE Lag) phenomenon, is reported. The low-loss GaAs-AlGaAs WMCs have been characterized over a wavelength range of 900-940 nm, resulting in TE-TM (TM-TE) mode conversion with efficiencies of greater than 96% and low-loss devices with conversion lengths as short as 150 μm. The properties and characteristics of the fully integrated WMCs, fabricated with a single masking and etch process, are in agreement with theoretical predictions.
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Holmes et al. (2005) studied this question.
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