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The time-of-flight technique has been used to measure the drift velocities for electrons and holes in high-purity single-crystalline CVD diamond. Measurements were made in the temperature interval 83≤T≤460 K and for electric fields between 90 and 4×103 V/cm, applied in the 〈100〉 crystallographic direction. The study includes low-field drift mobilities and is performed in the low-injection regime to perturb the applied electric field only minimally.
Gabrysch et al. (Tue,) studied this question.