What question did this study set out to answer?

To measure the drift velocities and low-field mobilities of electrons and holes in high-purity single-crystalline CVD diamond across varying temperatures and electric field strengths.

March 15, 2011Journal of Applied PhysicsOpen Access

Electron and hole drift velocity in chemical vapor deposition diamond

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Authors

MGMarkus GabryschUppsala University SMSaman MajdiUppsala University DTDaniel J. TwitchenElement Six (United Kingdom)

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Implication

Experimental study demonstrates electron and hole drift velocities across broad temperatures in CVD diamond, highlighting its potential for high-performance electronic devices.

Key Points

To measure the drift velocities and low-field mobilities of electrons and holes in high-purity single-crystalline CVD diamond across varying temperatures and electric field strengths.
Employed the time-of-flight technique under a low-injection regime to minimize perturbation of the applied electric field.
Applied electric fields ranging from 90 to 4×10³ V/cm along the 〈100〉 crystallographic direction over a temperature range of 83 K to 460 K.
Characterized electron and hole drift velocities in single-crystalline CVD diamond across electric fields of 90 to 4×10³ V/cm and temperatures from 83 to 460 K.
Quantified low-field drift mobilities for both carrier types under minimal field perturbation conditions.

Cite This Study

Gabrysch et al. (2011) studied this question.

synapsesocial.com/papers/69d95a8a5e5bcb4e3b835b5b https://doi.org/10.1063/1.3554721

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Implication

Experimental study demonstrates electron and hole drift velocities across broad temperatures in CVD diamond, highlighting its potential for high-performance electronic devices.

Electron and hole drift velocity in chemical vapor deposition diamond

Discussion

Member takes

Implication

Key Points

Cite This Study

Electron and hole drift velocity in chemical vapor deposition diamond

Discussion

Member takes

Implication

Key Points

Cite This Study

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