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January 24, 2014IEEE Transactions on Electron Devices

Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer

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Authors

LSLiang-Yu SuNational Chung Hsing UniversityFLFinella LeeNational Taiwan UniversityJHJian‐Jang HuangChinese Academy of Sciences

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Su et al. (2014) studied this question.

synapsesocial.com/papers/69d99c4e387cf70698684a0chttps://doi.org/10.1109/ted.2013.2294337
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