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January 1, 2002IEEE Electron Device Letters

Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

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MKMartin KuballUniversity of BristolJHJoseph M. HayesUniversity of LancashireMUMichael J. UrenUniversity of Bristol

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Kuball et al. (2002) studied this question.

synapsesocial.com/papers/69da40438988aeabbe686b04https://doi.org/10.1109/55.974795
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