What question did this study set out to answer?

Investigate the optical properties and the Franz-Keldysh electro-absorption effect at the direct band gap of germanium-tin alloys embedded in silicon-integrated photodetectors.

April 21, 2014Applied Physics Letters

Franz-Keldysh effect in GeSn pin photodetectors

View Full Paper

Ask AI

Bookmark

Investigate the optical properties and the Franz-Keldysh electro-absorption effect at the direct band gap of germanium-tin alloys embedded in silicon-integrated photodetectors.
Grew GeSn alloy layers with tin concentrations up to 4.2% in the intrinsic region of Ge heterojunction pin photodetectors on Si substrates using ultra-low temperature molecular beam epitaxy.
Determined the absorption coefficient as a function of photon energy and evaluated direct bandgap energies at room temperature across varying voltage conditions.
Confirmed the presence of the Franz-Keldysh effect across all tested GeSn photodetector samples at room temperature.
Demonstrated a maximum optical absorption ratio of 1.5 in devices containing 2% tin under a voltage swing of 3 V.

Discussion

No takes yet. Share an insight, caveat, or question.

Implication

Experimental study demonstrates room-temperature Franz-Keldysh absorption in germanium-tin photodetectors, indicating viability for silicon-compatible optical modulation.

Cite This Study

Oehme et al. (2014) studied this question.

synapsesocial.com/papers/69daa1d90d540cafc5839711 https://doi.org/10.1063/1.4873935

View Full Paper

Ask AI

Bookmark

Implication

Experimental study demonstrates room-temperature Franz-Keldysh absorption in germanium-tin photodetectors, indicating viability for silicon-compatible optical modulation.

Franz-Keldysh effect in GeSn pin photodetectors

Key Points

Discussion

Implication

Cite This Study

Franz-Keldysh effect in GeSn pin photodetectors

Key Points

Discussion

Implication

Cite This Study

Also Consider

Also Consider