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Ultrafast carrier dynamics in In0.16Ga0.84N were investigated using femtosecond transient transmission measurements. We observed a fast initial carrier cooling on a time scale of 500 fs followed by a slow relaxation process which persisted longer than 5 ps due to a hot phonon effect. Band gap renormalization induced transient absorption was observed using a probe photon energy 300 meV above the band edge. These results were compared to a model based on the numerical resolution of the carrier Boltzmann equations.
Sun et al. (Mon,) studied this question.