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Resistive switching memristor is an emerging nonvolatile memory technology designed to overcome the physical limitations of conventional systems and the performance bottleneck of the von Neumann architecture. Notably, halide perovskite (HP)-based memristors have gained significant attention in recent years due to their unique ionic migration behavior and exceptional photoelectric properties. This review highlights HP-based resistive switching, focusing on its recent developments in coupling light into memristors and discussing its implications for neuromorphic computing. The mechanisms of resistive switching are explored alongside the role of HP photoelectric properties in enhancing switching dynamics. The advantages and applications of light-coupled resistive switching, including reduced switching voltage, enhanced operation reliability, multilevel switching capability, and the development of light-integrated artificial synapses are discussed comprehensively. By fully harnessing the exceptional optoelectronic properties of HPs, this emerging field may pave the way for innovative approaches to memory technologies and light-responsive neuromorphic systems.
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Feng et al. (2025) studied this question.
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