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January 1, 2015RSC Advances

Physical model of threshold switching in NbO₂ based memristors

Stefan Slesazeck Hannes Mähne Helge Wylezich Andre Wachowiak J. Radhakrishnan Alon Ascoli Ronald Tetzlaff Thomas Mikolajick

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Abstract

This paper investigates the origin of the threshold switching effect in niobium oxide based filamentary switching cells.

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Slesazeck et al. (2015) studied this question.

synapsesocial.com/papers/69dac7470d8d6ef495a3c1f9 https://doi.org/10.1039/c5ra19300a

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory ApplicationsOriginal Research · 2011 · 90 citations
2Threshold current reduction for the metal–insulator transition in NbO<sub>2−<i>x</i></sub>-selector devices: the effect of ReRAM integrationOriginal Research · 2015 · 89 citations
3Nonlinear Dynamics of a Locally-Active MemristorOriginal Research · 2015 · 199 citations
4High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structuresOriginal Research · 2015 · 61 citations
5Phase transitions enable computational universality in neuristor-based cellular automataOriginal Research · 2013 · 54 citations

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