Research demonstrates improved performance in π-ion gel transistors using doping techniques, suggesting enhanced device efficiency.
π-Ion Gel Transistors The cover image illustrates a π-ion gel transistor (PIGT) with microsecond-scale response. In their Research Article (10.1002/adfm.202521674), Soh Kushida, Yohei Yamamoto, and co-workers demonstrate P3HT-based PIGTs combining high transconductance and fast switching. Hole-scavenger doping with BIH suppresses offset current and maintains a high on/off ratio, enabling high-performance organic electrochemical transistors.
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