High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

High quality GaN layers with dislocation density of (3.0±0.5)×108∕cm2 have been grown on silicon(111) substrates using a combination of AlGaN intermediate layers and a SixNy interlayer. A smooth and fully coalesced layer was obtained by virtue of a high temperature growth process which accelerates coalescence and improves at the same time the crystalline quality. This was confirmed by high resolution x-ray diffraction showing a full width of half maximum of 415arcsec for the asymmetric (−2201) rocking curve.