Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure

Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure, Uchida, Kenji, Gotoh, Jun, Goto, Shigeo, Yang, Tao, Niwa, Atsuko, Kasai, Jun-ichi, Mishima, Tomoyoshi