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May 1, 1997Japanese Journal of Applied Physics

Growth of GaN and Al0.2Ga0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy

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Authors

ONO. H. NamKorea UniversityMBM. D. BremserNorth Carolina State UniversityBWBrandon WardYale University

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Nam et al. (1997) studied this question.

synapsesocial.com/papers/69dc7077a1baf05934e52e10https://doi.org/10.1143/jjap.36.l532
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Also Consider

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  1. 1GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers1995 · 251 citations
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  3. 3Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition1993 · 34 citations
  4. 4Selective growth of gallium nitride layers with a rectangular cross-sectional shape and stimulated emission from the optical waveguides observed by photopumping1996 · 53 citations
  5. 5Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)1994 · 224 citations